China Vitae

Biography

Ge Changchun, male, Han nationality, is a native of Pinghu, Zhejiang Province, and was born in Shanghai. He graduated from North China Jiaotong University in 1952 and received a doctorate from the Dresden Technology University in Germany in 1983.

Ge Changchun has long been engaged in the research of material science, specifically in the development of diffusion barriers used to produce enriched uranium by gas diffusion method. He analyzed and deduced the relational formula between a series of properties parameters and structural parameters of complex diffusion barriers. Ge proposed a unique technological routine of manufacturing complex diffusion barriers.

Ge also submitted a theory and the technical foundation for developing various later complex diffusion barriers. While researching advanced ceramics, Ge proposed a complex nitride as a new agglomeration assistant of silicon nitride, which improved the high temperature performance of the material. He conducted the research of gas-solid system combustion for synthesizing nitride-based ceramics and solved some key science and technology problems of Si3N4, AlN and their heterogeneous ceramic combustion synthesis.

Ge is an academician of the Chinese Academy of Sciences.

Career Data