China Vitae

Biography

Zheng Yaozong, male, Han nationality is a native of Zhongshan, Guangdong Province, and was born in Hong Kong. He graduated from Hong Kong University in 1963 and received his doctorate from the University of British Columbia in 1967.

Zhang Yaozong has spent a great deal of his professional career systematically researching the metal- siliconoxide-silicon (MOS) system and its physics techniques. He invented the chlorine hydrogen mix and silicon oxidizing technology and solved the stability issue and voltage drift of the MOS device and integrated circuit threshold level. He then improved the performance, reliability and rate of the finished products of the MOS device and circuit.

Zhang proposed the world's first inversion layer current carrier surface roughness diffusion theory, which became the main factor that determines the mobility of the MOS inversion layer current carrier after entering into the deep sub micro stage of the MOS integrated circuit. He was also one of the early researchers to develop silicon nitride technology.

Zheng Yaozong is an academician of the Chinese Academy of Sciences.